3N163 SOT-143 4L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE ENHANCEMENT MO
$5.51
Available to order
Reference Price (USD)
1+
$5.51000
500+
$5.4549
1000+
$5.3998
1500+
$5.3447
2000+
$5.2896
2500+
$5.2345
Exquisite packaging
Discount
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Meet the 3N163 SOT-143 4L by Linear Integrated Systems, Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 3N163 SOT-143 4L stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Linear Integrated Systems, Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50mA
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id: 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -6.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 350mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-143-4
- Package / Case: TO-253-4, TO-253AA
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