55GN01MA-TL-E
onsemi
onsemi
RF TRANS NPN 10V 5.5GHZ 3MCP
$0.40
Available to order
Reference Price (USD)
3,000+
$0.08463
6,000+
$0.07617
15,000+
$0.06770
30,000+
$0.06347
75,000+
$0.05642
Exquisite packaging
Discount
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Upgrade your RF circuits with the 55GN01MA-TL-E, a high-efficiency Bipolar Junction Transistor (BJT) from onsemi. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The 55GN01MA-TL-E offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose onsemi for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 4.5GHz ~ 5.5GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
- Gain: 10dB @ 1GHz
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP
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