HFA3102BZ96
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 6 NPN 12V 10GHZ 14SOIC
$8.57
Available to order
Reference Price (USD)
1+
$8.57000
500+
$8.4843
1000+
$8.3986
1500+
$8.3129
2000+
$8.2272
2500+
$8.1415
Exquisite packaging
Discount
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The HFA3102BZ96 by Renesas Electronics America Inc is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Renesas Electronics America Inc for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: 6 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
- Gain: 12.4dB ~ 17.5dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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