BFP840ESDH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 2.25V 80GHZ SOT343
$0.60
Available to order
Reference Price (USD)
3,000+
$0.16415
6,000+
$0.15356
15,000+
$0.14297
30,000+
$0.13555
75,000+
$0.13238
Exquisite packaging
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The BFP840ESDH6327XTSA1 from Infineon Technologies is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the BFP840ESDH6327XTSA1 is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Infineon Technologies for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.25V
- Frequency - Transition: 80GHz
- Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
- Gain: 18.5dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-2
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