RX1214B300YI112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$436.80
Available to order
Reference Price (USD)
1+
$436.80000
500+
$432.432
1000+
$428.064
1500+
$423.696
2000+
$419.328
2500+
$414.96
Exquisite packaging
Discount
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Discover the RX1214B300YI112, a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP USA Inc., part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The RX1214B300YI112 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NXP USA Inc. for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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