A1P50S65M2-F
STMicroelectronics
STMicroelectronics
IGBT MOD 650V 50A 208W ACEPACK1
$47.43
Available to order
Reference Price (USD)
1+
$47.43194
500+
$46.9576206
1000+
$46.4833012
1500+
$46.0089818
2000+
$45.5346624
2500+
$45.060343
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with STMicroelectronics's A1P50S65M2-F IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The A1P50S65M2-F offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the A1P50S65M2-F in your next-generation HVDC systems or particle accelerator power supplies. STMicroelectronics delivers reliability where it matters most with the A1P50S65M2-F IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 1
Related Products
Infineon Technologies
FS150R07N3E4B11BOSA1
Microchip Technology
APT50GP60J
Infineon Technologies
FZ1200R45HL3BPSA1
Infineon Technologies
FZ1200R17HP4B2BOSA2
Infineon Technologies
FZ2400R17HP4B28BOSA2
Infineon Technologies
FP100R12N2T7B11BPSA1
Infineon Technologies
FF450R17ME4BOSA1
Infineon Technologies
6MS24017P43W41646NOSA1
Infineon Technologies
FP15R06W1E3BOMA1
Infineon Technologies