DDB6U75N16W1RBOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 69A 335W
$44.26
Available to order
Reference Price (USD)
24+
$34.52458
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's DDB6U75N16W1RBOMA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The DDB6U75N16W1RBOMA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the DDB6U75N16W1RBOMA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the DDB6U75N16W1RBOMA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 69 A
- Power - Max: 335 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF200R12KT4HOSA1
Microchip Technology
APT46GA90JD40
Infineon Technologies
F3L300R12MT4PB22BPSA1
Vishay General Semiconductor - Diodes Division
VS-GT80DA120U
Infineon Technologies
2ED300C17SROHSBPSA1
Infineon Technologies
FZ800R12KL4CNOSA1
Infineon Technologies
FP150R12N3T7B16BPSA1
Infineon Technologies
FF450R33T3E3B5BPSA1
IXYS
IXYN100N120B3H1
Infineon Technologies