FS30R06W1E3B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 45A 150W
$33.88
Available to order
Reference Price (USD)
24+
$26.84958
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FS30R06W1E3B11BOMA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS30R06W1E3B11BOMA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS30R06W1E3B11BOMA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS30R06W1E3B11BOMA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FZ600R17KE4HOSA1
Infineon Technologies
FS800R07A2E3B31BOSA1
Microchip Technology
APTGT150A60T1G
Infineon Technologies
FS15R06VE3B2BOMA1
Infineon Technologies
FF450R12KE4PHOSA1
Infineon Technologies
FS150R12KE3GBOSA1
Infineon Technologies
FP25R12KT4BPSA1
Infineon Technologies
FF600R07ME4B11BPSA1
Infineon Technologies
FS450R12OE4PBOSA1
Fairchild Semiconductor