FMG1G300US60H
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 300A, 600V, N-CHANNEL
$90.66
Available to order
Reference Price (USD)
1+
$90.66000
500+
$89.7534
1000+
$88.8468
1500+
$87.9402
2000+
$87.0336
2500+
$86.127
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Fairchild Semiconductor's FMG1G300US60H IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FMG1G300US60H offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FMG1G300US60H in your next-generation HVDC systems or particle accelerator power supplies. Fairchild Semiconductor delivers reliability where it matters most with the FMG1G300US60H IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 892 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
Infineon Technologies
FZ1200R33KF2CNOSA1
Microchip Technology
APT40GP60J
Infineon Technologies
FF1800R12IE5PBPSA1
Infineon Technologies
FD400R33KF2CKNOSA1
Vishay General Semiconductor - Diodes Division
VS-GT55NA120UX
Infineon Technologies
FP100R07N3E4B11BOSA1
Infineon Technologies
FZ800R33KL2CNOSA1
Infineon Technologies
FF200R12KS4HOSA1
Infineon Technologies
FP15R12KE3GBOSA1
Infineon Technologies