DDB6U100N16RRBPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2A-211
$113.00
Available to order
Reference Price (USD)
1+
$113.00000
500+
$111.87
1000+
$110.74
1500+
$109.61
2000+
$108.48
2500+
$107.35
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's DDB6U100N16RRBPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The DDB6U100N16RRBPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the DDB6U100N16RRBPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the DDB6U100N16RRBPSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2A
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