FS50R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 50A
$64.08
Available to order
Reference Price (USD)
1+
$64.08000
500+
$63.4392
1000+
$62.7984
1500+
$62.1576
2000+
$61.5168
2500+
$60.876
Exquisite packaging
Discount
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Optimize your power systems with Infineon Technologies's FS50R12W2T7B11BOMA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FS50R12W2T7B11BOMA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FS50R12W2T7B11BOMA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
- Current - Collector Cutoff (Max): 7.9 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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