APT50GR120JD30
Microchip Technology
Microchip Technology
IGBT MOD 1200V 84A 417W SOT227
$36.18
Available to order
Reference Price (USD)
1+
$36.17800
500+
$35.81622
1000+
$35.45444
1500+
$35.09266
2000+
$34.73088
2500+
$34.3691
Exquisite packaging
Discount
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The APT50GR120JD30 from Microchip Technology exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the APT50GR120JD30 in megawatt-level wind turbine converters. With Microchip Technology's proven track record, the APT50GR120JD30 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 84 A
- Power - Max: 417 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
- Current - Collector Cutoff (Max): 1.1 mA
- Input Capacitance (Cies) @ Vce: 5.55 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4
- Supplier Device Package: SOT-227
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