FF500R17KE4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 500A
$387.26
Available to order
Reference Price (USD)
1+
$236.86000
10+
$226.84800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FF500R17KE4BOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FF500R17KE4BOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FF500R17KE4BOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 500 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FD800R33KF2CKNOSA1
Infineon Technologies
FF600R12IP4PBPSA1
Infineon Technologies
FP30R06YE3B4BOMA1
Infineon Technologies
FF800R12KE3NOSA1
Infineon Technologies
FZ800R33KF2CNOSA1
Microchip Technology
APTGT50TL601G
Infineon Technologies
FD300R12KS4HOSA1
Infineon Technologies
FZ800R16KF4NOSA1
Infineon Technologies
FF200R17KE4HOSA1
Infineon Technologies