FZ800R33KL2CNOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 3300V 1500A 9800W
$1,046.99
Available to order
Reference Price (USD)
1+
$1046.99000
500+
$1036.5201
1000+
$1026.0502
1500+
$1015.5803
2000+
$1005.1104
2500+
$994.6405
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's FZ800R33KL2CNOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FZ800R33KL2CNOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FZ800R33KL2CNOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1500 A
- Power - Max: 9800 W
- Vce(on) (Max) @ Vge, Ic: 3.65V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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