FZ600R17KE4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 1200A 3350W
$254.16
Available to order
Reference Price (USD)
10+
$148.88700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FZ600R17KE4HOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FZ600R17KE4HOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FZ600R17KE4HOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1200 A
- Power - Max: 3350 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS800R07A2E3B31BOSA1
Microchip Technology
APTGT150A60T1G
Infineon Technologies
FS15R06VE3B2BOMA1
Infineon Technologies
FF450R12KE4PHOSA1
Infineon Technologies
FS150R12KE3GBOSA1
Infineon Technologies
FP25R12KT4BPSA1
Infineon Technologies
FF600R07ME4B11BPSA1
Infineon Technologies
FS450R12OE4PBOSA1
Fairchild Semiconductor
FMG1G300US60H
Infineon Technologies