VS-GT80DA120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 139A 658W SOT227
$38.99
Available to order
Reference Price (USD)
1+
$36.79000
10+
$33.92700
25+
$32.40200
100+
$28.97120
250+
$27.63700
Exquisite packaging
Discount
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The VS-GT80DA120U from Vishay General Semiconductor - Diodes Division is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the VS-GT80DA120U is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Vishay General Semiconductor - Diodes Division's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 139 A
- Power - Max: 658 W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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