IXYN100N120B3H1
IXYS
IXYS
IGBT MOD 1200V 165A 690W SOT227B
$38.59
Available to order
Reference Price (USD)
10+
$29.68100
Exquisite packaging
Discount
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IXYS's IXYN100N120B3H1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the IXYN100N120B3H1 enables higher power density in MRI gradient amplifiers. Choose IXYS for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 165 A
- Power - Max: 690 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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