A2G26H280-04SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$245.78
Available to order
Reference Price (USD)
250+
$118.86860
Exquisite packaging
Discount
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Meet the A2G26H280-04SR3, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The A2G26H280-04SR3 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the A2G26H280-04SR3 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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