A3G26D055N-2400
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 28W 2400MHZ
$703.12
Available to order
Reference Price (USD)
1+
$703.12000
500+
$696.0888
1000+
$689.0576
1500+
$682.0264
2000+
$674.9952
2500+
$667.964
Exquisite packaging
Discount
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Designed for superior RF performance, the A3G26D055N-2400 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The A3G26D055N-2400 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the A3G26D055N-2400 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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