A3I20X050GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$59.72
Available to order
Reference Price (USD)
1+
$59.72400
500+
$59.12676
1000+
$58.52952
1500+
$57.93228
2000+
$57.33504
2500+
$56.7378
Exquisite packaging
Discount
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The A3I20X050GNR1 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The A3I20X050GNR1's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s A3I20X050GNR1 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8GHz ~ 2.2GHz
- Gain: 29.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 145 mA
- Power - Output: 6.3W
- Voltage - Rated: 65 V
- Package / Case: OM-400G-8
- Supplier Device Package: OM-400G-8
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