BLM7G1822S-20PBY
NXP Semiconductors
NXP Semiconductors
BLM7G1822S-20PB - LDMOS 2-STAGE
$24.09
Available to order
Reference Price (USD)
100+
$26.48470
300+
$25.18217
Exquisite packaging
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The BLM7G1822S-20PBY from NXP Semiconductors is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BLM7G1822S-20PBY is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP Semiconductors's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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