AIKB30N65DF5ATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO263-3
$5.33
Available to order
Reference Price (USD)
1+
$5.33000
500+
$5.2767
1000+
$5.2234
1500+
$5.1701
2000+
$5.1168
2500+
$5.0635
Exquisite packaging
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Experience top-tier performance with the AIKB30N65DF5ATMA1 Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the AIKB30N65DF5ATMA1 ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 330µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 25ns/188ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): 67 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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