IKW20N60H3FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 40A TO247-3
$3.59
Available to order
Reference Price (USD)
1+
$3.97000
10+
$3.59900
240+
$2.99467
720+
$2.58713
1,200+
$2.22175
Exquisite packaging
Discount
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Optimize your power systems with the IKW20N60H3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKW20N60H3FKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 170 W
- Switching Energy: 800µJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 17ns/194ns
- Test Condition: 400V, 20A, 14.6Ohm, 15V
- Reverse Recovery Time (trr): 112 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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