IGD06N60TATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 12A 88W TO252-3
$0.62
Available to order
Reference Price (USD)
2,500+
$0.49172
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IGD06N60TATMA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IGD06N60TATMA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
- Power - Max: 88 W
- Switching Energy: 200µJ
- Input Type: Standard
- Gate Charge: 42 nC
- Td (on/off) @ 25°C: 9ns/130ns
- Test Condition: 400V, 6A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
Related Products
IXYS
IXGK72N60B3H1
Microchip Technology
APT70GR120B2
Renesas Electronics America Inc
RJH60D7DPQ-E0#T2
onsemi
NGTB75N65FL2WG
STMicroelectronics
STGF8NC60KD
onsemi
HGTG5N120BND
Infineon Technologies
AUIRGP66524D0
Toshiba Semiconductor and Storage
GT30N135SRA,S1E
STMicroelectronics
STGWT30V60DF
IXYS