GT30N135SRA,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
$3.88
Available to order
Reference Price (USD)
1+
$3.88000
500+
$3.8412
1000+
$3.8024
1500+
$3.7636
2000+
$3.7248
2500+
$3.686
Exquisite packaging
Discount
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Upgrade your power management systems with the GT30N135SRA,S1E Single IGBT transistor from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the GT30N135SRA,S1E provides reliable and efficient operation. Toshiba Semiconductor and Storage's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose GT30N135SRA,S1E for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
- Power - Max: 348 W
- Switching Energy: -, 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 270 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 60A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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