RJH60D7DPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT, 90A, 600V, N-CHANNEL
$9.32
Available to order
Reference Price (USD)
1+
$6.76000
10+
$6.04000
25+
$5.43560
Exquisite packaging
Discount
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The RJH60D7DPQ-E0#T2 by Renesas Electronics America Inc is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Renesas Electronics America Inc's reputation for quality, the RJH60D7DPQ-E0#T2 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 60ns/190ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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