IXYH75N65C3
IXYS
IXYS
IGBT 650V 170A 750W TO247
$8.10
Available to order
Reference Price (USD)
30+
$6.02700
Exquisite packaging
Discount
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Upgrade your power management systems with the IXYH75N65C3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYH75N65C3 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYH75N65C3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 170 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 750 W
- Switching Energy: 2.8mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 123 nC
- Td (on/off) @ 25°C: 27ns/93ns
- Test Condition: 400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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