APT75GN120B2G
Microchip Technology
Microchip Technology
IGBT 1200V 200A 833W TMAX
$16.36
Available to order
Reference Price (USD)
34+
$14.60265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the APT75GN120B2G Single IGBT transistor from Microchip Technology. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the APT75GN120B2G ensures energy efficiency and reliability. Trust Microchip Technology's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 833 W
- Switching Energy: 8045µJ (on), 7640µJ (off)
- Input Type: Standard
- Gate Charge: 425 nC
- Td (on/off) @ 25°C: 60ns/620ns
- Test Condition: 800V, 75A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
Related Products
Renesas Electronics America Inc
RJP60D0DPP-M0#T2
IXYS
IXA20IF1200HB
Alpha & Omega Semiconductor Inc.
AOTF10B60D2
IXYS
IXGR48N60C3D1
IXYS
IXBT42N170
IXYS
IXYH55N120C4
onsemi
FGD3325G2-F085
IXYS
IXBT16N170AHV
NTE Electronics, Inc
NTE3310
Infineon Technologies