IXYH55N120C4
IXYS
IXYS
IGBT 1200V 55A GEN4 XPT TO247
$8.88
Available to order
Reference Price (USD)
1+
$8.88000
500+
$8.7912
1000+
$8.7024
1500+
$8.6136
2000+
$8.5248
2500+
$8.436
Exquisite packaging
Discount
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Optimize your power systems with the IXYH55N120C4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYH55N120C4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 140 A
- Current - Collector Pulsed (Icm): 290 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
- Power - Max: 650 W
- Switching Energy: 3.5mJ (on), 1.34mJ (off)
- Input Type: Standard
- Gate Charge: 114 nC
- Td (on/off) @ 25°C: 20ns/180ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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