STGWA75M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$7.30
Available to order
Reference Price (USD)
1+
$6.19000
10+
$5.59300
100+
$4.65400
600+
$4.02063
1,200+
$3.45280
3,000+
$3.30720
Exquisite packaging
Discount
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Upgrade your power management systems with the STGWA75M65DF2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGWA75M65DF2 provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGWA75M65DF2 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 468 W
- Switching Energy: 690µJ (on), 2.54mJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: 47ns/125ns
- Test Condition: 400V, 75A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): 165 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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