STGYA120M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$15.67
Available to order
Reference Price (USD)
1+
$11.98000
10+
$11.08300
100+
$9.50750
600+
$8.56250
1,200+
$7.95000
Exquisite packaging
Discount
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The STGYA120M65DF2 by STMicroelectronics is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the STGYA120M65DF2 delivers robust performance. STMicroelectronics's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate STGYA120M65DF2 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
- Power - Max: 625 W
- Switching Energy: 1.8mJ (on), 4.41mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 66ns/185ns
- Test Condition: 400V, 120A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 202 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Exposed Pad
- Supplier Device Package: MAX247™
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