IXBT6N170
IXYS
IXYS
IGBT 1700V 12A 75W TO268
$12.09
Available to order
Reference Price (USD)
30+
$7.74900
Exquisite packaging
Discount
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Discover the IXBT6N170 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXBT6N170 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXBT6N170 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 36 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 17 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.08 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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