NGTB30N65IHL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 60A TO247-3
$3.17
Available to order
Reference Price (USD)
120+
$3.46275
Exquisite packaging
Discount
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Experience top-tier performance with the NGTB30N65IHL2WG Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the NGTB30N65IHL2WG ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 200µJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: -/145ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 430 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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