APT9M100B
Microchip Technology
Microchip Technology
MOSFET N-CH 1000V 9A TO247
$4.48
Available to order
Reference Price (USD)
1+
$4.48500
500+
$4.44015
1000+
$4.3953
1500+
$4.35045
2000+
$4.3056
2500+
$4.26075
Exquisite packaging
Discount
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Upgrade your designs with the APT9M100B by Microchip Technology, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the APT9M100B is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 335W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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