APTCV60TLM45T3G
Microchip Technology
Microchip Technology
IGBT MODULE 600V 100A 250W SP3
$110.31
Available to order
Reference Price (USD)
1+
$110.31455
500+
$109.2114045
1000+
$108.108259
1500+
$107.0051135
2000+
$105.901968
2500+
$104.7988225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microchip Technology's APTCV60TLM45T3G sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the APTCV60TLM45T3G in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Microchip Technology to deliver cutting-edge IGBT solutions with the APTCV60TLM45T3G power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter - IGBT, FET
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
Related Products
Infineon Technologies
BSM50GP120BOSA1
Infineon Technologies
FS3L200R10W3S7FB94BPSA1
IXYS
IXYN82N120C3H1
Infineon Technologies
FP30R06W1E3BOMA1
Infineon Technologies
FS35R12W1T4BOMA1
Fairchild Semiconductor
FP7G100US60
Infineon Technologies
FZ1800R12HP4B9HOSA2
Infineon Technologies
FF450R07ME4B11BPSA1
Infineon Technologies
FP15R12W1T4BOMA1
Infineon Technologies