FS35R12W1T4BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 65A 225W
$45.82
Available to order
Reference Price (USD)
1+
$38.32000
10+
$35.75100
Exquisite packaging
Discount
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The FS35R12W1T4BOMA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FS35R12W1T4BOMA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FS35R12W1T4BOMA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 225 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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