NXH35C120L2C2S1G
onsemi
onsemi
IGBT MOD 1200V 35A 26DIP
$60.63
Available to order
Reference Price (USD)
1+
$60.63167
500+
$60.0253533
1000+
$59.4190366
1500+
$58.8127199
2000+
$58.2064032
2500+
$57.6000865
Exquisite packaging
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The NXH35C120L2C2S1G from onsemi is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the NXH35C120L2C2S1G is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose onsemi's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
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