FP7G75US60
Fairchild Semiconductor
Fairchild Semiconductor
IGBT
$29.63
Available to order
Reference Price (USD)
1+
$29.63000
500+
$29.3337
1000+
$29.0374
1500+
$28.7411
2000+
$28.4448
2500+
$28.1485
Exquisite packaging
Discount
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Fairchild Semiconductor's FP7G75US60 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FP7G75US60 enables higher power density in MRI gradient amplifiers. Choose Fairchild Semiconductor for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 310 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.515 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EPM7
- Supplier Device Package: EPM7
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