APTGT50A120T1G
Microchip Technology
Microchip Technology
IGBT MODULE 1200V 75A 277W SP1
$64.71
Available to order
Reference Price (USD)
100+
$38.38770
Exquisite packaging
Discount
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Experience next-generation power control with Microchip Technology's APTGT50A120T1G IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGT50A120T1G offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGT50A120T1G in your next-generation HVDC systems or particle accelerator power supplies. Microchip Technology delivers reliability where it matters most with the APTGT50A120T1G IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 277 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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