APTGT50DH120TG
Microchip Technology
Microchip Technology
IGBT MODULE 1200V 75A 277W SP4
$113.44
Available to order
Reference Price (USD)
100+
$57.24850
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Microchip Technology's APTGT50DH120TG IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGT50DH120TG offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGT50DH120TG in your next-generation HVDC systems or particle accelerator power supplies. Microchip Technology delivers reliability where it matters most with the APTGT50DH120TG IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 277 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
Related Products
Infineon Technologies
FF400R17KE4EHOSA1
Infineon Technologies
FP40R12KT3BOSA1
Infineon Technologies
FF600R12ME4B72BOSA1
Infineon Technologies
FP100R07N3E4BOSA1
Infineon Technologies
FS75R06KE3BPSA1
Infineon Technologies
FS820R08A6P2BBPSA1
Infineon Technologies
FS200R12PT4BOSA1
Fairchild Semiconductor
FMG1G200US60H
Infineon Technologies
BYM600A170DN2HOSA1
Microchip Technology