APTGT50SK170TG
Microchip Technology
Microchip Technology
IGBT MODULE 1700V 75A 312W SP4
$95.89
Available to order
Reference Price (USD)
100+
$49.82580
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microchip Technology's APTGT50SK170TG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the APTGT50SK170TG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Microchip Technology to deliver cutting-edge IGBT solutions with the APTGT50SK170TG power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 312 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
Related Products
Infineon Technologies
FS50R12KT3BPSA1
Infineon Technologies
FB50R07W2E3B23BOMA1
Infineon Technologies
BSM15GD120DN2E3224BPSA1
Vishay General Semiconductor - Diodes Division
VS-GT100TP60N
Infineon Technologies
BSM300GA120DLCHOSA1
Infineon Technologies
FS25R12KE3GBPSA1
Infineon Technologies
FZ2400R17HP4B9HOSA2
IXYS
MIEB101W1200EH
Infineon Technologies
BSM150GB170DN2E3256HDLA1
Microchip Technology