APTM120DA30CT1G
Microchip Technology
Microchip Technology
MOSFET N-CH 1200V 31A SP1
$84.28
Available to order
Reference Price (USD)
1+
$84.28083
500+
$83.4380217
1000+
$82.5952134
1500+
$81.7524051
2000+
$80.9095968
2500+
$80.0667885
Exquisite packaging
Discount
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The APTM120DA30CT1G from Microchip Technology sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Microchip Technology's APTM120DA30CT1G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 657W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
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