ZXMP4A57E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 40V 2.9A SOT26
$0.70
Available to order
Reference Price (USD)
3,000+
$0.26289
6,000+
$0.24771
15,000+
$0.23253
30,000+
$0.22190
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the ZXMP4A57E6TA by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the ZXMP4A57E6TA is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
Related Products
onsemi
NTP095N65S3HF
Rohm Semiconductor
RSJ301N10FRATL
Rohm Semiconductor
RD3H160SPFRATL
Infineon Technologies
BSS806NH6327XTSA1
Vishay Siliconix
SI2337DS-T1-E3
Vishay Siliconix
SIHF23N60E-GE3
Diodes Incorporated
DMN33D8LTQ-13
Rochester Electronics, LLC
LH7A400N0G000B5
Microchip Technology
APT26F120L
Infineon Technologies