AT-32011-TR1G
Broadcom Limited
Broadcom Limited
RF TRANS NPN 5.5V SOT143
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Discover the AT-32011-TR1G, a cutting-edge RF Bipolar Junction Transistor (BJT) from Broadcom Limited, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The AT-32011-TR1G features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Broadcom Limited for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
- Gain: 12.5dB ~ 14dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
- Current - Collector (Ic) (Max): 32mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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