B11G2327N70DYZ
Ampleon USA Inc.
Ampleon USA Inc.
B11G2327N70DYZ/PQFN-12X7/REELDP
$51.43
Available to order
Reference Price (USD)
1+
$51.43000
500+
$50.9157
1000+
$50.4014
1500+
$49.8871
2000+
$49.3728
2500+
$48.8585
Exquisite packaging
Discount
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The B11G2327N70DYZ is a high-efficiency RF MOSFET transistor by Ampleon USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The B11G2327N70DYZ's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With Ampleon USA Inc.'s reputation for quality, you can trust the B11G2327N70DYZ to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.7GHz
- Gain: 30.3dB
- Voltage - Test: -
- Current Rating (Amps): 1.4µA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 65 V
- Package / Case: 36-QFN Exposed Pad
- Supplier Device Package: 36-PQFN (12x7)
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