BAP70-04W,115
NXP USA Inc.
NXP USA Inc.
RF DIODE PIN 50V 260MW SOT323-3
$0.15
Available to order
Reference Price (USD)
3,000+
$0.14520
6,000+
$0.13640
15,000+
$0.12760
30,000+
$0.11704
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance BAP70-04W,115 RF Diode from NXP USA Inc., designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BAP70-04W,115 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust NXP USA Inc.'s expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.3pF @ 20V, 1MHz
- Resistance @ If, F: 1.9Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 260 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
MACOM Technology Solutions
MA4P604-30
MACOM Technology Solutions
MSS20-046-C15
MACOM Technology Solutions
MA4P4001F-1091T
NXP USA Inc.
BAP50-03,135
Linear Integrated Systems, Inc.
ID100 TO-78 6L
Comchip Technology
CPINU5208-HF
Infineon Technologies
BAR6306WH6327XTSA1
Vishay General Semiconductor - Diodes Division
BA479G-TAP
onsemi
MMBD301LT1
Skyworks Solutions Inc.