BAR151E6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 100V 250MW SOT23-3
$0.52
Available to order
Reference Price (USD)
3,000+
$0.11518
6,000+
$0.10892
15,000+
$0.10266
30,000+
$0.09515
75,000+
$0.09202
Exquisite packaging
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Discover the high-performance BAR151E6327HTSA1 RF Diode from Infineon Technologies, designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BAR151E6327HTSA1 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust Infineon Technologies's expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Last Time Buy
- Diode Type: PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 100V
- Current - Max: 140 mA
- Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
- Resistance @ If, F: 12Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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