BAR61E6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 100V 250MW SOT143
$0.59
Available to order
Reference Price (USD)
1+
$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unparalleled RF performance with the BAR61E6327HTSA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAR61E6327HTSA1 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - PI Element
- Voltage - Peak Reverse (Max): 100V
- Current - Max: 140 mA
- Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
- Resistance @ If, F: 12Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: -
Related Products
Infineon Technologies
BAT62E6327HTSA1
MACOM Technology Solutions
MA4P404-30
Infineon Technologies
BAT1705E6327HTSA1
Infineon Technologies
BA895H6327XTSA1
NXP USA Inc.
BAP70-02,115
MACOM Technology Solutions
MADP-007437-0287FT
Skyworks Solutions Inc.
SMP1307-027LF
Solid State Inc.
1N3910
Skyworks Solutions Inc.
CDF7621-000
Rohm Semiconductor