BAR8802LRHE6327XTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 80V 250MW TSLP-2
$0.12
Available to order
Reference Price (USD)
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$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
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Discover the high-performance BAR8802LRHE6327XTSA1 RF Diode from Infineon Technologies, designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BAR8802LRHE6327XTSA1 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust Infineon Technologies's expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
- Resistance @ If, F: 600mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2-7
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