BAT17E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT23-3
$0.39
Available to order
Reference Price (USD)
3,000+
$0.05752
6,000+
$0.05059
15,000+
$0.04366
30,000+
$0.04135
75,000+
$0.03904
150,000+
$0.03442
Exquisite packaging
Discount
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Experience unparalleled RF performance with the BAT17E6327HTSA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAT17E6327HTSA1 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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